IGBT (Insulated Gate Bipolar Transistor)

Description :IGBT (Insulated Gate Bipolar Transistor) is a three-terminal semiconductor device (Gate, Collector, Emitter) that combines the high-speed switching of a MOSFET with the low saturation voltage of a Bipolar Junction Transistor (BJT). Specifications: (1) Model No:FF1400R17IP4 (2) Voltage : 1700 V (3) Curren t :1400 A (4) Repetitive Peak Collector Current : 2800 A (5) Collector-Emitter Saturation Voltage : 1.75 V to 2.2V @ 1400A, 15V (6) Gate-Emitter Peak Voltage :20 V (7) Module Type: Half-bridge (Dual switch). (8) Ope rating Temperature: -40 to 150 ?C. (9) Internal Gate Resistor: 1.6 ohm. (10) Series/Package: Prime PAC 3. Make: Infineon, Mitsubishi, Semikron, ABB. [ Warranty Period: 12 Months after the date of delivery ] ] SSE ELECL. WHEEL CONTROL, Karnataka 4.00 Numbers Consignee RWF