Loading
Loading…
Loading…
| # | Company | Amount |
|---|---|---|
| 1 | ₹1.6 L Per unit ₹39,058 · 4 Nos. | ₹1.6 L Per unit ₹39,058 · 4 Nos. |
Tender Value
Refer Docs
Closing Date
26 May 2026, 2:00 pmClosed
1 location across Karnataka
IGBT (Insulated Gate Bipolar Transistor)
P2265376
P2265376
Open - Indigenous
Goods
Jalgaon, Maharashtra
₹0
Exempted
7 May 2026
7 May 2026
Description :IGBT (Insulated Gate Bipolar Transistor) is a three-terminal semiconductor device (Gate, Collector, Emitter) that combines the high-speed switching of a MOSFET with the low saturation voltage of a Bipolar Junction Transistor (BJT). Specifications: (1) Model No:FF1400R17IP4 (2) Voltage : 1700 V (3) Curren t :1400 A (4) Repetitive Peak Collector Current : 2800 A (5) Collector-Emitter Saturation Voltage : 1.75 V to 2.2V @ 1400A, 15V (6) Gate-Emitter Peak Voltage :20 V (7) Module Type: Half-bridge (Dual switch). (8) Ope rating Temperature: -40 to 150 ?C. (9) Internal Gate Resistor: 1.6 ohm. (10) Series/Package: Prime PAC 3. Make: Infineon, Mitsubishi, Semikron, ABB. [ Warranty Period: 12 Months after the date of delivery ] ] SSE ELECL. WHEEL CONTROL, Karnataka 4.00 Numbers Consignee RWF
Tap a document below to read it instantly. You can also download everything as a ZIP if you prefer.
details.html
HTML
nit.pdf
NIT
5583533.pdf
ATTACHMENT
5359624.pdf
ATTACHMENT
5359666.pdf
ATTACHMENT
5089053.pdf
ATTACHMENT
5359649.pdf
ATTACHMENT
5089049.pdf
ATTACHMENT
Download all tender documents and submit your bid
Disclaimer: TenderKart has made every reasonable effort to ensure that the information on this page is accurate and authentic, however it cannot be held liable for any third-party claims or losses or any damages. TenderKart makes no warranty, expressed or implied, as to the results obtained from the use of this information. If you notice any error or omission, please let us know at .